CHEN Jingsheng

Education

1990-1994 Department of Modern Physics, Lanzhou University, P.R. China, B.S.
1994-1999 Department of Modern Physics, Lanzhou University, P.R. China, Ph.D.

Work Experience

1999-2001 School of Electric and Electronic Engineering, Nanyang Technological University, Post-doctoral
2001-2007 Data Storage Institute, A*STAR, Research Scientist
2008-2012 Department of Materials Science and Engineering, National University of Singapore, Associate Professor
2013-Present Department of Materials Science and Engineering, National University of Singapore, Professor

Research Interests

1. Magnetic materials/heterostructure and devices for spintronics: spin orbital torque, spin Hall effect, Rashba effect, spin wave, spin torque ferromagnetic resonance (ST-FMR)

2. Heterostructure ferroelectric/ferromagnetic multiferroics

3. Ferroelectric materials, ferroelectric tunnel junction and ferroelectric domain wall devices

4. Neuromophic computing based on magnetic non-volatile memory, ferroelectric based non-volatile memory, resistance random access memory.

5. Strong electron correlated oxide

Representative Publications

[1] Liang Liu, Chenghang Zhou, Xinyu Shu, Changjian Li, Tieyang Zhao, Weinan Lin, Jinyu Deng, Qidong Xie, Shaohai Chen, Jing Zhou, Rui Guo, Han Wang, Jihang Yu, Shu Shi, Ping Yang, Stephen Pennycook, Aurelien Manchon, Jingsheng Chen*, “Symmetry-dependent field-free switching of perpendicular magnetization” Nature Nanotechnology, Accepted (2020).

[2] Weinan Lin, Baishun Yang, Andy Paul Chen, Xiaohan Wu, Rui Guo, Shaohai Chen, Liang Liu, Qidong Xie, Xinyu Shu, Yajuan Hui, Gan Moog Chow, Yuanping Feng, Giovanni Carlotti, Silvia Tacchi, Hongxin Yang, Jingsheng Chen*, ”Perpendicular Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction at an Oxide/Ferromagnetic Metal Interface” Physical Review Letters, 124, 217202 (2020).

[3] Rui Guo, Lu You, Weinan Lin, Amr Abdelsamie, Xinyu Shu, Guowei Zhou, Shaohai Chen, Liang Liu, Xiaobing Yan, Junling Wang, Jingsheng Chen*, “Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect” Nature communications, 11, 2571 (2020).

[4] Han Wang, Yingying Dai, Zhongran Liu, Qidong Xie, Chao Liu, Weinan Lin, Liang Liu, Ping Yang, John Wang, Thirumalai Venky Venkatesan, Gan Moog Chow, He Tian, Zhidong Zhang, Jingsheng Chen* “Overcoming the limits of interfacial Dzyaloshinskii-Moriya interaction by antiferromagnetic order in multiferroic heterostructures” Advanced Materials, 32 (14), 1904415 (2020).

[5] Liang Liu, Qing Qin, Weinan Lin, Changjian Li, Qidong Xie, Zhishiuh Lim, Shikun He, Jihang Yu, Mengsha Li, Xinyu Shu, Stephen J. Pennycook, Jingsheng Chen*, “Current-induced magnetization switching in all-oxide SrRuO3/SrIrO3 bilayer” Nature Nanotechnology, 14, 939 (2019).

[6] Yangyang Li, Zhi Gen Yu, Ling Wang, Yakui Weng, Chi Sin Tang, Xinmao Yin, Kun Han, Haijun Wu, Xiaojiang Yu, Lai Mun Wong, Dongyang Wan, Xiao Renshaw Wang, Jianwei Chai, Yong-Wei Zhang, Shijie Wang, John Wang, Andrew T.S. Wee, Mark B.H. Breese, Stephen J. Pennycook, Thirumalai Venkatesan, Shuai Dong, Jun Min Xue, Jingsheng Chen* “Electronic-reconstruction-enhanced hydrogen evolution catalysis in oxide polymorphs” Nature Communication, 10, 3149 (2019).

[7] Jing Zhou, Xiao Wang, Yaohua Liu, Jihang Yu, Huixia Fu, Liang Liu, Shaohai Chen, Jinyu Deng, Weinan Lin, Xinyu Shu, Herng Yau Yoong, Tao Hong, Masaaki Matsuda, Ping Yang, Stefan Adams, Binghai Yan, Xiufeng Han, Jingsheng Chen*, “Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn” Science Advance, 5 (5), eaau6696 (2019).

[8] Qidong Xie, Weinan Lin, Baishun Yang, Xinyu Shu, Shaohai Chen, Liang Liu, Xiaojiang Yu, Mark B. H. Breese, Tiejun Zhou, Ming Yang, Zheng Zhang, Shijie Wang, Hongxin Yang, Jianwei Chai, Xiufeng Han, Jingsheng Chen*, “Giant enhancements of perpendicular magnetic anisotropy and spin-orbit torque by MoS2 layer” Advanced Materials, 31 (21), 1900776 (2019).

[9] Qing Qin, Liang Liu, Weinan Lin, Xinyu Shu, Qidong Xie, Zhishiuh Lim, Changjian Li, Shikun He, Gan Moog Chow, Jingsheng Chen*, “Emergence of Topological Hall Effect in a SrRuO3 Single Layer” Advanced Materials, 1807008 (2019),

[10] H. Wang, Z.R. Liu, H.Y. Yoong, T. R. Paudel, J.X. Xiao, R. Guo, W.N. Lin, P. Yang, J. Wang, G. M. Chow, T. Venkatesan, E. Y. Tsymbal, H. Tian and J.S. Chen*, “Direct observation of room-temperature out-of-plane ferroelectricity and tunnelling electroresistance at the two-dimensional limit” Nature Communication, 9 (1), 3319 (2018).

Personal homepage

http://www.mse.nus.edu.sg/staff/cjs.php